1 item symbol ratings unit drain-source voltage v ds 500 continuous drain current i d 9 pulsed drain current i d(puls] 36 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 9 maximum avalanche energy e as *1 155.3 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.02 tc=25 c 135 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2sk3519-01 fuji power mosfet 200303 n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =500v v gs =0v v ds =400v v gs =0v v gs =30v i d =4a v gs =10v i d =4a v ds =25v v cc =300v i d =4a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.926 62.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =250v i d =8a v gs =10v l=3.5mh t ch =25c i f =8a v gs =0v t ch =25c i f =8a v gs =0v -di/dt=100a/s t ch =25c v a a v a mj kv/s kv/s w c c 500 3.0 5.0 25 250 10 100 0.65 0.85 3.5 7 750 1130 100 150 4.0 6.0 14 21 914 24 36 69 20 30 8.5 13 5.5 8.5 9 1.00 1.50 0.65 3.5 -55 to +150 outline drawings [mm] to-220ab equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < *4 vds 500v < = *1 l=3.5mh, vcc=50v, see to avalanche energy graph *2 tch 150c = <
2 0 2 4 6 8 1012141618202224262830 0 2 4 6 8 10 12 14 16 18 20 20v 10v 8v 7.5v 7.0v id [a] vds [v] typical output characteristics vgs=6.5v characteristics 2sk3519-01 fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 012345678910 0.1 1 10 id[a] vgs[v] typical transfer characteristic 0.1 1 10 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v 7.0v vgs=6.5v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=4a,vgs=10v 0 255075100125150 0 50 100 150 200 250 allowable power dissipation pd=f(tc) pd [w] tc [ c]
3 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 2sk3519-01 fuji power mosfet vgs=f(qg):id=8a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=300v, vgs=10v, rg=10 ? 0 102030405060 0 2 4 6 8 10 12 14 16 18 20 22 24 qg [nc] typical gate charge characteristics vgs [v] 400v 250v vcc= 100v 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 10 0 10 1 10 0 10 1 10 2 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 100 200 300 400 500 i as =4a i as =9a i as =6a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=50v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma vgs(th) [v] tch [ c]
4 2sk3519-01 fuji power mosfet http://www.fujielectric.co.jp/denshi/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=50v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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